BS EN 60747-15:2012 pdf download
BS EN 60747-15:2012 pdf download.Semiconductor devices —Discrete devices Part 15: lsolated power semiconductor devices.
5.2.6 Mechanical ratings
5.2,6.1 Mounting torque of screws to heat sink (M.)
Minimum mounting torque that shall be applied to the fixing screws to the heat sink
52.6.2 Mounting torque of screws to terminals (Mi)
Minimum mounting torque that shall be applied to screwed terminals
5.2.6.3 Mounting force (F)
Minimum mounting force for pressure mounted devices, fixed by clips, that shall be applied to the isolated pressure contact device
5.2.6.4 Terminal pull.out force (Fi)
Maximum force
5.2.6.5 Acceleration 0
Maximum value along each axis (x, y, z)
5.2.6.6 Flatness of the heatsink surface (s) (where appropriate)
Maximum deviation from flatness for the heatsink surface over the whole mounting area
5.2.6,7 Roughness of the heatsink surface (is) (where appropriate)
Maximum roughness of the heatsink surface over the whole mounting area
5.2.7 Climatic ratings (where appropriate)
Limiting values of environmental parameters for the final application as follows
— ambient temperature
— humidity
— speed and pressure of air
— irradiation by sun and other heat sources
— mechanical active substances
— chemically active substances
— biological issues
shall be described in classes as specified in IEC 80721-3-3:1994, Table 1.
5.3 Characteristics
5.3.1 Mechanical characteristics
5.3.1.1 Creepage distance along surface (s)
Minimum value of distance along surface of the insulating material of the device between terminals of different potential and to base plate
NOTE 1 EC 60112 (deta.l; to oomparatlvl tracking ends CT1) and IEC 60664-12007 Subclaus. 52 apply
NOTE 2 Air gap. betweee plastic surface end grounded meld or between terminals of oppos4te polarity smeller than 1,0 mm ((or pollution degree 2), or 1,5 mm (poliution degree 3) shorten the countable creepage distance considerably (dete.ls see 60664-1:2007. examples).
5.3.1.2 Clearance distance In air
Minimum value at distance through air between terminals of different potential of the isolated device and to base plate
NOTE Fat details, a.. iEC 60664.1:2D07. (Subcl.uss 4.6 and Subclaus. 5 1) which shows typical axampi.. of vanous shapes of clearance distances
5.3.1.3 Mass of the device
Maximum value excluding accessories (mounting hardware).
5.3.1.4 Flatness of the base plate (C) (where appropriate)
Maximum and minimum allowed deviation from flatness for the base plate and Its direction (convex or concave),
5.3.2 Parasitic inductance (Lp)
Maximum or typical value between the main terminals of each main current path.
5.3.3 Parasitic capacitances (Cp)
Maximum value of parasitic capacitance between the specified main terminal(s) and the cooling surface.
5.3.4 Partial discharge inception voltage (IM or (RMS) (where appropriate)
Minimum peak value VIM or r.nis, value V,.isi between the isolated terminals and the base plate (details, see IEC 60270).
5.3.5 Partial discharge extinction voltage (eM or e(RMS)) (where appropriate)
Minimum peak value V..,a or r.m.s. value V.tRMS) between the isolated terminals and the base plate (for details, see IEC 60270).
5.3.8 Thermal resistances
5.3.6.1 Thermal resistance junction to case for case rated devices (thU.c)x)
Maximum value of thermal resistance junction to a specified reference point at the case (base
plate) per switch X (for example of Ihe diode (0). thyristor (T), IGBT (I) or MOSFET (M)).
5.3.6.2 Thermal resistance case to heat sink (rnc.s)) (where appropriate)
Maximum or typical value of thermal resistance between two specified points at the case and at the heat sink of the case rated device (“module), when the case Is mounted according to manufacturer’s mounting instructions.
5.3.6.3 Thermal resistance case to heat sink per switch (th(c.s)x) (where appropriate)
Maximum or typical value of thermal resistance between the two specified points of the case and the heat sink of the switch X (for example of the diode (D). thyristor (T), IGBT (I) or MOSFET (M) ) of the isolated case rated devices (rnodul&), when the case is mounted according to the manufacturer’s mounting instructions.
5.3.6.4 Thermal resistance junction to heat sink for heat sink rated devices (rnj-i)x)
Maximum or typical value of thermal resistance junction to a specified point at the heat sink per switch X (for example of the diode (D), thyristor (T), IGBT (I) or MOSFET (M)), when the device is mounted according to the manufacturer’s mounting instructions.
