IEEE C62.59-2019 pdf download

IEEE C62.59-2019 pdf download.IEEE Standard for Test Methods and Preferred Values for Silicon PN-Junction Clamping Diodes.
NOTE—Sec IEC 60050-521-05-12 [84].
punch-through voltage: Low-current peak voltage marking the start of the diode clamping characteristic. NOTE—This punch-through diode term may also be applied to foldback diodes.
reverse current, IR: Current flowing through the diode when reverse voltage is applied.
NOTE—See IEC 60747-2:20 16 [B 11].
reverse direction (of a PN junction): Direction of current that results when the N-type semiconductor region is at a positive voltage relative to the P-type region.
NOTE—See IEC 60050-52 1-05-04 [B4].
reverse voltage, VR: Constant voltage applied to a diode in the reverse direction.
NOTE 1—See IEC 60747-2:20 16 [B 11].
NOTE 2—This term normally applies to the portion of the reverse characteristic before breakdown occurs.
semiconductor component: Component whose essential characteristics are due to the flow of charge carriers within a semiconductor.
NOTE 1 See IEC 60050-521-04-01 [B4].
NOTE 2—The definition includes components whose essential characteristics are only in part due to the flow of charge carriers in a semiconductor but that arc considered as semiconductor components for the purpose of specification.
(semiconductor) diode: Two-terminal semiconductor component having an asymmetrical voltage-current characteristic.
NOTE 1—See IEC 60050-521-04-03 [B4J.
NOTE 2—Unless otherwise qualified, this term usually means a component with the voltage-current characteristic typical of a single PNjunction.
NOTE 3—Voltage clamping diodes are normally classified by clamping phenomenon: Zener, avalanche, foldback, punch-through. and forward conduction. Acronyms such as ABD (avalanche breakdown diode), TVS (transient voltage suppressor), and SAD (silicon avalanche diode) may also be used.
snap-back voltage: Lowest voltage in the clamping characteristic after the punch-through voltage occurs. NOTE—This punch-through diode term may also be applied to foldback diodes.
space-charge region: Region in which the net charge density is not zero.
NOTE 1—See IEC 60050-521-02-79 [B4].
NOTE 2—The net charge is caused by electrons, holes, ionized acceptors, and donors.
storage temperature: Temperature at which the device may be stored without any voltage being applied. NOTE—See IEC 60747-1 [B10].
temperature coefficient of breakdown voltage iVBR: Ratio of the change in breakdown voltage VBR to changes in temperature.
NOTE—See IEC 61643-321 [B 15].
thermal resistance: Quotient of the difference between the virtual temperature of the device and the temperature of a stated external reference point, by the steady-state power dissipation in the device.
NOTE 1—See IEC 60050-52 1-05-13 [B41.
NOTE 2—Expressed as either millivolts per degree Kelvin or per cent per degree Kelvin (mV/K or %/K).
terminal (of a semiconductor component): Conductive element provided for external connection.
NOTE—See IEC 60050-521-05-02 [B4J.
total capacitance: Capacitance at the diode terminals, measured under specified bias conditions.
NOTE Sec IEC 60747-3 [B 12].
total power dissipation: Rated (maximum) value of the power that can be continuously dissipated by the diode at a specified ambient, case, or lead temperature without exceeding the maximum rated junction temperature.
transient thermal impedance: Quotient of: a) the change in temperature difference between two specified points or regions at the end of a time interval, and b) the step-function change in power dissipation beginning at that time interval which causes the change in temperature difference.
NOTE I Sec 1EC60747-1 [BlO].
NOTE 2—The term used in practice must indicate the two specified points or regions, for example, as in “junctioncase transient thermal impedance.” The use of the shortened term “transient thermal impedance” is permitted only if no ambiguity is likely to occur.
virtual junction temperature, internal equivalent temperature (of a semiconductor component):
Theoretical temperature, which is based on a simplified representation of the thermal and electrical behavior of the semiconductor device.
NOTE—See IEC 60050-521-05-14 [B4J.
Zener breakdown (of a PN junction): Breakdown caused by the transition of electrons from the valence hand to the conduction band due to tunnel action under the influence of a strong electric field in a PNjunction.
NOTE—See IEC 60050-52 1-05-09 [B4].
Zener voltage: Minimum voltage across a PN junction at which Zener breakdown occurs.
NOTE 1—See IEC 60050-52 1-05-10 [B4].
NOTE 2—Normally the maximum value of clamping voltage is reported for the rated value of peak pulse current.
3.2 Acronyms and abbreviations.